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Freescale Semiconductor Technical Data
Document Number: MW7IC2725N Rev. 2, 10/2008
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. * Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 28.5 dB Power Added Efficiency -- 17% Device Output Signal PAR -- 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset -- - 50 dBc in 1 MHz Channel Bandwidth Driver Applications * Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 27.8 dB Power Added Efficiency -- 3.2% Device Output Signal PAR -- 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset -- - 56 dBc in 1 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, Pout = 25 Watts CW * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 W CW Pout * Typical Pout @ 1 dB Compression Point ] 25 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * On - Chip Matching (50 Ohm Input, DC Blocked) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2500 - 2700 MHz, 4 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2725NR1
CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2725GNR1
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2725NBR1
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout/VDS2
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation (1)
13 12
NC GND
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Operating Junction Temperature Input Power
(1,2)
Symbol VDS VGS VDD Tstg TJ Pin
Value - 0.5, +65 - 0.5, +10 32, +0 - 65 to +150 225 20
Unit Vdc Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case WiMAX Application (Case Temperature 75C, Pout = 4 W Avg.) CW Application (Case Temperature 81C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA Symbol RJC 5.9 1.4 5.5 1.3 Value (2,3) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 -- 12.5 1.9 2.7 15.8 2.7 -- 19.5 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 800 mAdc) Stage 2 - Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 111 -- pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 11 0.15 1.9 2.7 14 0.47 2.7 -- 18 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 25.5 15 -- -- -- 28.5 17 9 - 50 - 15 30.5 -- -- - 46 - 10 dB % dB dBc dB
Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (2) Error Vector Magnitude
(2)
RCE EVM
-- --
- 33 2.2
-- --
dB % rms (continued)
1. Part internally matched both on input and output. 2. RCE = 20Log(EVM/100)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 27 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Part - to - Part Insertion Phase Variation @ Pout = 25 W CW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 25 50 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500-2700 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
90 0.5 2.1 2.3 22 0.036 0.003
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Relative Constellation Error @ Pout = 1.25 W Avg. 1. RCE = 20Log(EVM/100)
(1)
Gps PAE PAR ACPR IRL RCE
-- -- -- -- -- --
27.8 3.2 9 - 56 - 13 - 40
-- -- -- -- -- --
dB % dB dBc dB dB
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 4 RF Device Data Freescale Semiconductor
VDD1 C17 C9 C8
VD2 C16 C15
B1 28 V
C14 C7 1 2 3 4 5 Z1 Z2 Z3 C4 C5 C6 VG1 R4 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500 0.075 1.640 0.100 0.151 0.025 0.050 0.356 x 0.027 x 0.127 x 0.027 x 0.042 x 0.268 x 0.268 x 0.056 x 0.056 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056 Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040 x 0.061 Microstrip 0.020 x 0.050 Microstrip 0.050 x 0.050 Microstrip 0.050 x 0.027 Microstrip 0.338 x 0.020 Microstrip 1.551 x 0.027 Microstrip Rogers R04350B, 0.0133, r = 3.48 R5 R6 C2 C3 C1 Z4 6 C11 7 NC 8 9 10 11 NC C10 Quiescent Current Temperature Compensation NC NC NC NC 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 DUT NC 16 NC 15 Z13 Z12 Z14 C13 C12
RF INPUT
RF OUTPUT
NC 13 NC 12
* Line length includes microstrip bends
Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part B1 C1, C4, C7, C12, C15 C2, C5, C8, C13 C3, C6, C9, C14 C10 C11 C16, C17 R1, R4 R2, R3, R5, R6 Description 47 , 100 MHz Short Ferrite Bead 6.8 pF Chip Capacitors 10 nF Chip Capacitors 1 F, 50 V Chip Capacitors 2.4 pF Chip Capacitor 3.3 pF Chip Capacitor 10 F, 50 V Chip Capacitors 12 K, 1/4 W Chip Resistors 1 K, 1/4 W Chip Resistors Part Number 2743019447 ATC600S6R8CT250XT C0603C103J5RAC GRM32RR71H105KA01B ATC600S2R4BT250XT ATC600S3R3BT250XT GRM55DR61H106KA88B CRCW12061202FKEA CRCW12061001FKEA Manufacturer Fair - Rite ATC Kemet Murata ATC ATC Murata Vishay Vishay
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 5
MW7IC2725N Rev. 1.3
B1
C17 C8 C7 C4 C5 R4 R5 C1 R6 C9
C16 C15 C14 C13 CUT OUT AREA C12
C2
C10
C11
VG1 R1 VG2 R2 R3
C6 C3
Figure 4. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 28.6 28.4 28.2 Gps, POWER GAIN (dB) 28 V = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 DD OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel 27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 27.4 27.2 ACPR 27 26.8 26.6 2500 IRL 2525 2550 2575 2600 2625 2650 2675 PARC Gps D 18 17 16 15 14 -53 -54 ACPR (dBc) -55 -56 -57 -58 2700 IRL, INPUT RETURN LOSS (dB) -16 -18 -20 -22 -24 -26 -0.2 -0.4 -0.6 -0.8 -1 -1.2 PARC (dB) PARC (dB)
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg.
3.5 D Gps 3 2.5 D, DRAIN EFFICIENCY (%) 28.6 28.4 28.2 Gps, POWER GAIN (dB)
-10 ACPR (dBc) -15 -20 -25 -30 -35
IRL, INPUT RETURN LOSS (dB) 10
28 2 VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz Channel Bandwidth 1.5 4 27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF -56 27.4 27.2 27 26.8 26.6 2500 IRL 2525 2550 2575 2600 2625 2650 2675 ACPR PARC -57 -58 -59 -60 -61 2700
-0.2 -0.4 -0.6 -0.8 -1 -1.2
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg.
30 IDQ2 = 412 mA 29 Gps, POWER GAIN (dB) 28 27 26 25 24 23 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW 137 mA VDD = 28 Vdc IDQ1 = 77 mA f = 2600 MHz 344 mA 275 mA Gps, POWER GAIN (dB) 29 96 mA 28 27 58 mA 26 25 24 23 0.1 1 100 Pout, OUTPUT POWER (WATTS) CW 39 mA 77 mA 30 IDQ1 = 103 mA
206 mA
VDD = 28 Vdc IDQ2 = 275 mA f = 2600 MHz
Figure 7. Power Gain versus Output Power @ IDQ1 = 77 mA
Figure 8. Power Gain versus Output Power @ IDQ2 = 275 mA
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 1 10 TWO-TONE SPACING (MHz) 100 IM3-U IM3-L IM5-L IM5-U IM7-L IM7-U VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA IDQ2 = 275 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz
Figure 9. Intermodulation Distortion Products versus Tone Spacing
29 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 28.5 Gps, POWER GAIN (dB) 28 27.5 27 26.5 26 1 0 -1 -2 -3 -4 -2 dB = 6.21 W -5 1 3 6 9 12 15 Pout, OUTPUT POWER (WATTS) -3 dB = 8.59 W PARC -1 dB = 4.01 W 35 30 25 20 15 10 5 -30 -35 -40 -45 -50 -55 -60 ACPR (dBc)
ACPR D Gps
Figure 10. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. WiMAX 50 TC = -40_C 25_C 85_C Gps D ACPR VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF -40_C 25_C 85_C 85_C -15 -20 -25 ACPR (dBc)
-30 25_C -40_C -35 -40 -45 -50 -55 -60
Figure 11. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 8 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
TYPICAL CHARACTERISTICS
25 S21 19 -10 MTTF (HOURS) 108 1st Stage 107 2nd Stage 106 105 0 109
S21 (dB)
7 S11 1 VDD = 28 Vdc IDQ1 = 77 mA, IDQ2 = 275 mA 2000 2200 2400 2600 2800 3000 3200
-30
-40
S11 (dB)
13
-20
-5 1800
-50 3400
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 17%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
Figure 13. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) -50 -60 -70 8 10 -80 -90 -20 ACPR in 1 MHz Integrated BW -15 -10 -5 0 ACPR in 1 MHz Integrated BW 5 10 15 20 0.01 0.001 0.0001 0 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 -10 -20 -30 -40 10 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 9
Zo = 50
f = 2700 MHz
f = 2700 MHz Zload f = 2500 MHz Zsource f = 2500 MHz
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zsource W 36.381 - j4.271 36.041 - j3.328 35.753 - j2.363 35.516 - j1.380 35.333 - j0.381 35.203 + j0.635 35.126 + j1.664 35.104 + j2.707 35.138 + j3.760 Zload W 5.717 - j3.618 5.624 - j3.187 5.578 - j2.770 5.589 - j2.412 5.586 - j2.088 5.579 - j1.807 5.552 - j1.559 5.564 - j1.335 5.568 - j1.164
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 10 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25C, 50 Ohm System)
f MHz 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 S11 |S11| 0.735 0.729 0.715 0.695 0.665 0.619 0.549 0.452 0.332 0.199 0.089 0.078 0.116 0.170 0.192 0.177 0.163 0.153 0.119 0.059 0.014 0.055 0.056 0.029 0.069 0.122 0.287 0.184 0.129 0.128 0.164 0.223 0.297 0.374 0.447 0.515 0.563 0.619 0.651 0.671 61.0 53.3 46.5 39.8 32.9 25.0 15.1 2.6 - 14.4 - 40.1 - 91.9 167.4 90.3 - 13.2 - 93.2 - 123.0 - 132.6 - 140.5 - 153.6 - 165.3 - 50.7 - 55.0 - 84.7 177.4 103.3 84.1 59.8 - 5.4 - 17.4 - 41.0 - 65.7 - 86.2 - 100.4 - 110.4 - 118.0 - 123.4 - 128.0 - 131.8 - 136.0 - 140.1 |S21| 0.001 0.004 0.014 0.039 0.110 0.299 0.708 1.335 2.195 3.445 5.724 10.041 19.072 32.642 31.339 26.174 23.605 22.427 21.922 21.172 20.172 19.222 17.366 14.562 12.199 10.485 8.086 7.102 6.753 6.107 5.445 4.867 4.363 3.918 3.534 3.198 2.951 2.761 2.581 2.418 S21 - 167.6 - 146.0 - 146.4 - 152.5 - 166.8 169.4 134.4 96.3 62.1 32.7 4.8 - 26.2 - 65.1 - 126.0 171.3 130.3 98.7 70.0 41.7 14.2 - 12.5 - 39.5 - 66.8 - 91.5 - 111.7 - 130.4 - 154.4 - 152.5 - 169.3 175.4 160.8 146.7 133.2 120.0 107.2 95.3 83.3 71.2 58.8 46.0 |S12| 0.000501 0.000361 0.000114 0.000385 0.000773 0.00134 0.00198 0.00250 0.00290 0.00320 0.00345 0.00382 0.00525 0.00781 0.00640 0.00432 0.00294 0.00224 0.00208 0.00216 0.00227 0.00213 0.00209 0.00247 0.00286 0.00308 0.00326 0.00292 0.00256 0.00232 0.00213 0.00196 0.00183 0.00176 0.00181 0.00191 0.00211 0.00206 0.00218 0.00237 S12 26.6 34.7 109.5 148.4 155.6 153.2 143.0 131.2 121.7 113.8 108.5 107.0 105.3 77.9 41.0 24.9 22.3 31.0 42.5 48.9 48.9 51.4 57.8 65.6 62.2 56.3 50.9 39.2 38.6 38.5 39.9 42.0 46.0 51.4 56.5 60.9 58.8 63.0 64.8 68.3 |S22| 0.992 0.993 0.991 0.992 0.989 0.979 0.944 0.903 0.879 0.847 0.817 0.749 0.571 0.054 0.555 0.726 0.770 0.789 0.800 0.820 0.850 0.889 0.933 0.961 0.968 0.969 0.969 0.966 0.969 0.970 0.972 0.972 0.973 0.974 0.974 0.975 0.975 0.976 0.975 0.975 S22 167.9 166.3 164.6 162.7 160.5 157.8 155.2 153.9 153.0 151.0 147.7 140.6 125.2 160.2 - 144.4 - 160.3 - 167.1 - 170.1 - 171.0 - 171.2 - 171.3 - 171.7 - 173.2 - 175.8 - 178.0 - 179.5 179.3 178.6 178.0 177.4 176.9 176.4 176.0 175.5 174.9 174.3 173.7 173.0 172.3 171.6 (continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 11
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.679 0.677 0.661 0.696 0.721 0.737 0.753 0.771 0.788 0.812 0.829 - 144.4 - 147.9 - 153.5 - 153.8 - 161.3 - 168.1 - 174.7 179.2 174.4 169.8 166.0 |S21| 2.257 2.054 1.851 1.644 1.453 1.243 1.042 0.859 0.708 0.583 0.477 S21 32.6 19.2 5.0 - 5.8 - 19.4 - 32.1 - 43.7 - 54.3 - 62.8 - 71.5 - 79.0 |S12| 0.00265 0.00280 0.00281 0.00328 0.00350 0.00357 0.00374 0.00401 0.00407 0.00416 0.00427 S12 68.5 65.0 67.1 69.3 65.8 64.5 64.5 62.5 58.4 57.7 55.8 |S22| 0.974 0.976 0.976 0.976 0.977 0.978 0.979 0.980 0.980 0.981 0.982 S22 171.0 170.5 170.0 169.6 169.4 169.2 169.2 169.2 169.3 169.3 169.3
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 12 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
50 P3dB = 45.73 dBm (36 W) 48 Pout, OUTPUT POWER (dBm) 46 44 42 40 38 36 34 34 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 42.7 + j11.6 Zload 4.86 - j1.63 P1dB VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 sec(on), 10% Duty Cycle, f = 2500 MHz P1dB = 44.61 dBm (29 W) Actual Pout, OUTPUT POWER (dBm) Ideal 50 48 46 44 42 40 38 36 34 32 23456 78 9 10 11 12 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource 39.5 - j8.7 Zload 3.53 - j1.66 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 sec(on), 10% Duty Cycle, f = 2700 MHz P3dB = 44.46 dBm (35 W) P1dB = 45.42 dBm (28 W) Actual Ideal
Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2500 MHz
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 2 Date June 2008 July 2008 Oct. 2008 * Initial Release of Data Sheet * Added MW7IC2725NBR1 device and corresponding case outline information to data sheet. * Added Fig. 13, MTTF versus Junction Temperature, p. 9 Description
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MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
Rev. 24 2, 10/2008 Document Number: MW7IC2725N
RF Device Data Freescale Semiconductor

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